The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Mar. 19, 2014
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Ching-Lin Chan, Huwei Township, TW;
Cheng-Chi Lin, Toucheng Township, TW;
Shih-Chin Lien, Sinjhuang, TW;
Shyi-Yuan Wu, Hsinchu, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/0865 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/66659 (2013.01); H01L 29/66696 (2013.01); H01L 29/7835 (2013.01);
Abstract
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and disposed in the substrate, a source well having the first conductivity type and disposed in the high-voltage well, a drift region disposed in the high-voltage well and spaced apart from the source well, and a deep implantation region having the first conductivity type and disposed in the high-voltage well between the source well and the drift region.