The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Oct. 02, 2014
Applicant:

International Rectifier Corporation, El Segundo, CA (US);

Inventors:

Chuan Cheah, Torrance, CA (US);

Michael A. Briere, Scottsdale, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 23/29 (2006.01); H01L 23/482 (2006.01); H01L 23/00 (2006.01); H01L 29/20 (2006.01); H01L 27/088 (2006.01); H01L 29/201 (2006.01); H01L 29/205 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 23/293 (2013.01); H01L 23/4824 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/29 (2013.01); H01L 24/30 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 27/088 (2013.01); H01L 29/201 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/4175 (2013.01); H01L 29/41758 (2013.01); H01L 29/452 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/056 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05555 (2013.01); H01L 2224/05556 (2013.01); H01L 2224/05563 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/0615 (2013.01); H01L 2224/0616 (2013.01); H01L 2224/06177 (2013.01); H01L 2224/131 (2013.01); H01L 2224/291 (2013.01); H01L 2224/29005 (2013.01); H01L 2224/29014 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/29023 (2013.01); H01L 2224/29101 (2013.01); H01L 2224/3003 (2013.01); H01L 2224/3015 (2013.01); H01L 2224/30177 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/0665 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13064 (2013.01); H01L 2924/19041 (2013.01);
Abstract

Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using solder bars for external circuit connections have been disclosed. The solderable front metal structure may comprise a tri-metal such as TiNiAg, and may be configured to expose source and drain contacts of the HEMT as alternating elongated digits or bars. Additionally, a single package may integrate multiple such HEMTs wherein the front metal structures expose alternating interdigitated source and drain contacts, which may be advantageous for DC-DC power conversion circuit designs using III-nitride devices. By using solder bars for external circuit connections, lateral conduction is enabled, thereby advantageously reducing device Rdson.


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