The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Feb. 04, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 21/02244 (2013.01); H01L 21/28088 (2013.01); H01L 21/31144 (2013.01); H01L 21/76805 (2013.01);
Abstract
The semiconductor device includes a gate electrode, a first interlayer dielectric, a first mask layer, a second mask layer and a second interlayer dielectric. The first interlayer dielectric surrounds the periphery of the gate electrode, and the first mask layer is disposed on the gate electrode. The first mask layer and the gate electrode have at least one same metal component. The second mask layer is disposed on the sidewalls of the first mask layer, and the second interlayer dielectric is disposed on the second mask layer and in direct contact with the first interlayer dielectric.