The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Mar. 10, 2015
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Veeraraghavan S. Basker, Schenectady, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Ali Khakifirooz, Los Altos, CA (US);
Charles W. Koburger, III, Delmar, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1211 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 29/0847 (2013.01); H01L 29/6681 (2013.01); H01L 29/785 (2013.01);
Abstract
An finFET structure including a plurality of fins etched from a semiconductor substrate, a plurality of gates above and perpendicular to the plurality of fins, each comprising a pair of spacers on opposing sides of the gates, and a gap fill material above the semiconductor substrate, below the gate, and between the plurality of fins, wherein the gate separates the gap fill material from each of the plurality of fins.