The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Jul. 08, 2013
United Microelectronics Corp., Hsin-Chu, TW;
Guang-Yaw Hwang, Tainan, TW;
Ling-Chun Chou, Yunlin County, TW;
I-Chang Wang, Tainan, TW;
Shin-Chuan Huang, Tainan, TW;
Jiunn-Hsiung Liao, Tainan, TW;
Shin-Chi Chen, Tainan, TW;
Pau-Chung Lin, Taoyuan County, TW;
Chiu-Hsien Yeh, Tainan, TW;
Chin-Cheng Chien, Tainan, TW;
Chieh-Te Chen, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A strained silicon substrate structure includes a first transistor and a second transistor disposed on a substrate. The first transistor includes a first gate structure and two first source/drain regions disposed at two sides of the first gate structure. A first source/drain to gate distance is between each first source/drain region and the first gate structure. The second transistor includes a second gate structure and two source/drain doped regions disposed at two side of the second gate structure. A second source/drain to gate distance is between each second source/drain region and the second gate structure. The first source/drain to gate distance is smaller than the second source/drain to gate distance.