The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Oct. 22, 2014
United Microelectronics Corp., Hsin-Chu, TW;
Hsin-Yu Chen, Nantou County, TW;
Home-Been Cheng, Keelung, TW;
Yu-Han Tsai, Kaohsiung, TW;
Ching-Li Yang, Ping-Tung Hsien, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A through silicon via structure is disclosed. The through silicon via includes: a substrate; a first dielectric layer disposed on the substrate and having a plurality of first openings, in which a bottom of the plurality of first openings is located lower than an original surface of the substrate; a via hole disposed through the first dielectric layer and the substrate, in which the via hole not overlapping for all of the plurality of first openings; a second dielectric layer disposed within the plurality of first openings and on a sidewall of the via hole while filling the plurality of first openings; and a conductive material layer disposed within the via hole having the second dielectric layer on the sidewall of the via hole, thereby forming a through silicon via.