The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Jul. 01, 2011
Huang Jiun-jie, Kaohsiung, TW;
Chi-yen Lin, Tainan, TW;
Ling-sung Wang, Tainan, TW;
Chih-fu Chang, Neipu Township, Pingtung County, TW;
Huang Jiun-Jie, Kaohsiung, TW;
Chi-Yen Lin, Tainan, TW;
Ling-Sung Wang, Tainan, TW;
Chih-Fu Chang, Neipu Township, Pingtung County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of reliability testing of a semiconductor device is described. The embodiment, includes providing a capacitor including an insulating layer interposing two conductive layers. A plurality of voltages are provided to the capacitor including providing a first voltage and a second voltage greater than the first voltage. A leakage associated with the capacitor is measured while applying the second voltage. In an embodiment, the leakage measured while applying the second voltage indicates that a failure of the insulating layer of the capacitor has occurred. In an embodiment, the capacitor is an inter-digitated metal-oxide-metal (MOM) capacitor. The reliability testing may be correlated to TDDB test results. The reliability testing may be performed at a wafer-level.