The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Dec. 31, 2013
Intermolecular Inc., San Jose, CA (US);
Guowen Ding, San Jose, CA (US);
Brent Boyce, Novi, MI (US);
Jeremy Cheng, Cupertino, CA (US);
Jose Ferreira, Rumelange, DE;
Muhammad Imran, Brownstown, MI (US);
Minh Huu Le, San Jose, CA (US);
Daniel Schweigert, Fremont, CA (US);
Yu Wang, San Jose, CA (US);
Yongli Xu, Plymouth, MI (US);
Guizhen Zhang, Santa Clara, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Guardian Industries Corp., Auburn Hills, MI (US);
Abstract
Disclosed herein are systems, methods, and apparatus for forming a low emissivity panel. In various embodiments, a partially fabricated panel may be provided. The partially fabricated panel may include a substrate, a reflective layer formed over the substrate, and a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the substrate and the top dielectric layer. The top dielectric layer may include tin having an oxidation state of +4. An interface layer may be formed over the top dielectric layer. A top diffusion layer may be formed over the interface layer. The top diffusion layer may be formed in a nitrogen plasma environment. The interface layer may substantially prevent nitrogen from the nitrogen plasma environment from reaching the top dielectric layer and changing the oxidation state of tin included in the top dielectric layer.