The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Sep. 12, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Jaw-Juinn Horng, Hsinchu, TW;
Chia-Lin Yu, Sigang Township, TW;
Chung-Hui Chen, HsinChu, TW;
Der-Chyang Yeh, Hsin-Chu, TW;
Yung-Chow Peng, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
Through silicon via (TSV) isolation structures are provided and suppress electrical noise such as may be propagated through a semiconductor substrate when caused by a signal carrying active TSV such as used in 3D integrated circuit packaging. The isolation TSV structures are surrounded by an oxide liner and surrounding dopant impurity regions. The surrounding dopant impurity regions may be P-type dopant impurity regions that are coupled to ground or N-type dopant impurity regions that may advantageously be coupled to V. The TSV isolation structure is advantageously disposed between an active, signal carrying TSV and active semiconductor devices and the TSV isolation structures may be formed in an array that isolates an active, signal carrying TSV structure from active semiconductor devices.