The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Mar. 21, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Harry-Hak-Lay Chuang, Crescent, SG;
Ming Zhu, Singapore, SG;
Lee-Wee Teo, Singapore, SG;
Bao-Ru Young, Hsinchu County, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/31055 (2013.01); H01L 21/31111 (2013.01); H01L 21/76224 (2013.01); H01L 29/0649 (2013.01); H01L 28/20 (2013.01);
Abstract
An integrated circuit includes a semiconductor substrate; a first shallow trench isolation (STI) feature of a first width and a second STI feature of a second width in a semiconductor substrate. The first width is less than the second width. The first STI feature has an etch-resistance less than that of the second STI feature.