The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Sep. 12, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Han-Wei Yang, Hsinchu, TW;
Yi-Ruei Lin, Taipei, TW;
Chen-Chung Lai, Guanxi Township, TW;
Kang-Min Kuo, Zhubei, TW;
Bor-Zen Tien, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An integrated circuit includes a number of lateral diffusion measurement structures arranged on a silicon substrate. A lateral diffusion measurement structure includes a p-type region and an n-type region which cooperatively span a predetermined initial distance between opposing outer edges of the lateral diffusion measurement structure. The p-type and n-type regions meet at a p-n junction expected to be positioned at a target junction location after dopant diffusion has occurred.