The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Dec. 18, 2014
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Abstract
A method of forming a micro-electro-mechanical systems device includes: providing a substrate; sequentially forming a tantalum nitride (TaN) layer and a hard mask layer on the substrate, the hard mask layer having a thickness larger than a thickness of the TaN layer; coating photoresist on the hard mask layer, patterning the photoresist and performing a first etching process on the hard mask layer with the photoresist serving as a mask to form an opening in the hard mask layer, wherein a portion of the thickness of the hard mask layer is remained under the opening; removing the photoresist; and performing a second etching process to remove the portion of the thickness of the hard mask layer under the opening as well as a portion of the TaN layer under the opening to form a trench.