The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Jun. 24, 2010
Akihiko Furukawa, Tokyo, JP;
Yasuhiro Kagawa, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Shuhei Nakata, Tokyo, JP;
Kenichi Ohtsuka, Tokyo, JP;
Shoyu Watanabe, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
Akihiko Furukawa, Tokyo, JP;
Yasuhiro Kagawa, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Shuhei Nakata, Tokyo, JP;
Kenichi Ohtsuka, Tokyo, JP;
Shoyu Watanabe, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
In a high speed switching power semiconductor device having a sense pad, a high voltage is generated during switching operations in well regions under the sense pad due to a displacement current flowing through its flow path with a resistance, whereby the power semiconductor device sometimes breaks down by dielectric breakdown of a thin insulating film such as a gate insulating film. In a power semiconductor device according to the invention, sense-pad well contact holes are provided on well regions positioned under the sense pad and penetrate a field insulating film thicker than the gate insulating film to connect to the source pad, thereby improving reliability.