The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2016

Filed:

Aug. 07, 2012
Applicants:

Ohhan Kim, Kyounggi-Do, KR;

Sunmi Kim, KyoungKi-do, KR;

Kyunghoon Lee, Kyounggi-Do, KR;

Inventors:

OhHan Kim, Kyounggi-Do, KR;

SunMi Kim, KyoungKi-do, KR;

KyungHoon Lee, Kyounggi-Do, KR;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/552 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/561 (2013.01); H01L 23/29 (2013.01); H01L 23/3121 (2013.01); H01L 23/3135 (2013.01); H01L 23/552 (2013.01); H01L 24/97 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/97 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/09701 (2013.01); H01L 2924/14 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/3025 (2013.01); H01L 2924/30105 (2013.01);
Abstract

A semiconductor device includes a multi-layer substrate. A ground shield is disposed between layers of the substrate and electrically connected to a ground point. A plurality of semiconductor die is mounted to the substrate over the ground shield. The ground shield extends beyond a footprint of the plurality of semiconductor die. An encapsulant is formed over the plurality of semiconductor die and substrate. Dicing channels are formed in the encapsulant, between the plurality of semiconductor die, and over the ground shield. A plurality of metal-filled holes is formed along the dicing channels, and extends into the substrate and through the ground shield. A top shield is formed over the plurality of semiconductor die and electrically and mechanically connects to the ground shield through the metal-filled holes. The top and ground shields are configured to block electromagnetic interference generated with respect to an integrated passive device disposed in the semiconductor die.


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