The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2016

Filed:

Apr. 24, 2015
Applicant:

Globalfoundries, Inc., Grand Cayman, KY;

Inventors:

Xunyuan Zhang, Albany, NY (US);

Xuan Lin, Watervliet, NY (US);

Vimal Kamineni, Albany, NY (US);

Assignee:

GLOBALFOUNDRIES, INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53266 (2013.01); H01L 23/528 (2013.01); H01L 23/53209 (2013.01); H01L 23/53228 (2013.01); H01L 23/53295 (2013.01);
Abstract

Integrated circuits with improved contact structures are provided. In an exemplary embodiment, an integrated circuit includes a semiconductor substrate disposed with a device therein and/or thereon. The integrated circuit includes a contact structure in electrical contact with the device. The contact structure includes a plug metal and a barrier layer, and the barrier layer is selected from fluorine-free tungsten (FFW), tungsten carbide, and tungsten nitride. The integrated circuit further includes a dielectric material overlying the semiconductor substrate. Also, the integrated circuit includes an interconnect formed within the dielectric material and in electrical contact with the contact structure.


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