The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Sep. 28, 2012
Qunhua Wang, San Jose, CA (US);
Weijie Wang, Cupertino, CA (US);
Young Jin Choi, Santa Clara, CA (US);
Seon-mee Cho, Santa Clara, CA (US);
Yi Cui, San Jose, CA (US);
Beom Soo Park, Cupertino, CA (US);
Soo Young Choi, Fremont, CA (US);
Qunhua Wang, San Jose, CA (US);
Weijie Wang, Cupertino, CA (US);
Young Jin Choi, Santa Clara, CA (US);
Seon-Mee Cho, Santa Clara, CA (US);
Yi Cui, San Jose, CA (US);
Beom Soo Park, Cupertino, CA (US);
Soo Young Choi, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.