The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Sep. 07, 2012
Kevin K. Chan, Staten Island, NY (US);
Young-hee Kim, Mohegan Lake, NY (US);
Isaac Lauer, Mahopac, NY (US);
Ramachandran Muralidhar, Mohopac, NY (US);
Dae-gyu Park, Poughquaq, NY (US);
Xinhui Wang, Poughkeepsie, NY (US);
Min Yang, Yorktown Heights, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Young-Hee Kim, Mohegan Lake, NY (US);
Isaac Lauer, Mahopac, NY (US);
Ramachandran Muralidhar, Mohopac, NY (US);
Dae-Gyu Park, Poughquaq, NY (US);
Xinhui Wang, Poughkeepsie, NY (US);
Min Yang, Yorktown Heights, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Field effect transistors fabricated using atomic layer doping processes are disclosed. In accordance with an embodiment of an atomic layer doping method, a semiconducting surface and a dopant gas mixture are prepared. Further, a dopant layer is grown on the semiconducting surface by applying the dopant gas mixture to the semiconducting surface under a pressure that is less than 500 Torr and a temperature that is between 300° C. and 750° C. The dopant layer includes at least 4×10active dopant atoms per cmthat react with atoms on the semiconducting surface such that the reacted atoms increase the conductivity of the semiconducting surface.