The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Jul. 25, 2012
Fumitaka Kume, Annaka, JP;
Fumitaka Kume, Annaka, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
An ozone gas generation processing apparatus that includes a light source of ultraviolet rays and a wafer placement section, generates ozone gas by irradiating ultraviolet rays from the light source in an atmosphere containing oxygen, and processes a wafer on the wafer placement section with the ozone gas, the ozone gas generation processing apparatus comprising a light-blocking plate that allows the generated ozone gas to pass therethrough and blocks the ultraviolet rays between the light source and the wafer placed on the wafer placement section. An ozone gas generation processing apparatus and a method of forming an oxide film silicon film can make an adjustment to make thinner an oxide film formed on a wafer surface, the wafer surface is not damaged by ultraviolet rays when processed, and a method for evaluating a silicon single crystal wafer, obtaining a more stable measurement value of C-V characteristics are provided.