The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
May. 28, 2014
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Ting-Chang Chang, Kaohsiung, TW;
Kuan-Chang Chang, Kaohsiung, TW;
Tsung-Ming Tsai, Kaohsiung, TW;
Chih-Hung Pan, Taichung, TW;
Ying-Lang Wang, Tai-Chung, TW;
Kei-Wei Chen, Tainan, TW;
Shih-Chieh Chang, Taipei, TW;
Te-Ming Kung, Taichung, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A resistive memory cell is disclosed. The resistive memory cell comprises a pair of electrodes and a multi-layer resistance-switching network disposed between the pair of electrodes. The multi-layer resistance-switching network comprises a pair of carbon doping layers and a group-IV element doping layer disposed between the pair of carbon doping layers. Each carbon doping layer comprises silicon oxide doped with carbon. The group-IV doping layer comprises silicon oxide doped with a group-IV element. A method of fabricating a resistive memory cell is also disclosed. The method comprises forming a first carbon doping layer on a first electrode using sputtering, forming a group-IV element doping layer on the first carbon doping layer using sputtering, forming a second carbon doping layer on the group-IV element doping layer using sputtering, and forming a second electrode on the second carbon doping layer using sputtering.