The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Sep. 19, 2014
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Tsun-Min Cheng, Changhua County, TW;
Min-Chuan Tsai, New Taipei, TW;
Chih-Chien Liu, Taipei, TW;
Jen-Chieh Lin, Kaohsiung, TW;
Pei-Ying Li, Tainan, TW;
Shao-Wei Wang, Taichung, TW;
Mon-Sen Lin, Ping-Tung, TW;
Ching-Ling Lin, Kaohsiung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/423 (2006.01); H01L 29/43 (2006.01); H01L 29/772 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 21/82345 (2013.01); H01L 29/4232 (2013.01); H01L 29/435 (2013.01); H01L 29/66045 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 29/51 (2013.01);
Abstract
A metal gate structure located on a substrate includes a gate dielectric layer, a metal layer and a titanium aluminum nitride metal layer. The gate dielectric layer is located on the substrate. The metal layer is located on the gate dielectric layer. The titanium aluminum nitride metal layer is located on the metal layer.