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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9281372 B1

PDFFull Text
Date of Patent:
Mar. 08, 2016

Filed:

Jul. 17, 2014

Metal gate structure and manufacturing method thereof

Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Shin-Jiun Kuang, Hsinchu, TW;

Tsung-Hsing Yu, Taipei, TW;

Yi-Ming Sheu, Hsinchu, TW;

Chun-Yi Lee, Hsinchu County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;

Attorneys:

WPAT, P.C.

Anthony King

Primary Examiner:

Nikolay Yushin

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 21/00 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/495 (2013.01); H01L 21/28008 (2013.01); H01L 29/51 (2013.01);
Abstract

The present disclosure provides a semiconductor structure includes a gate structure disposed over a substrate, wherein the gate structure includes a high-k dielectric layer and a work function structure. The high-k dielectric layer includes a base portion and a side portion, the side portion is extended from an end of the base portion, the side portion is substantially orthogonal to the base portion. The work function structure includes a first metal disposed over the high-k dielectric layer and a second metal disposed over the first metal and including a bottom portion and a sidewall portion extended from an end of the bottom portion, wherein the first metal includes different materials from the second metal, and a length of an interface between the sidewall portion and the bottom portion to a length of the bottom portion within the high-k dielectric layer is in a predetermined ratio.

Find Patent Forward Citations

Kuang, Shin-Jiun. (2016). Metal gate structure and manufacturing method thereof (U.S. Patent No. 9281372). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9281372

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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