The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2016

Filed:

Mar. 03, 2015
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Teng-Hao Yeh, Hsinchu, TW;

Yen-Hao Shih, New Taipei, TW;

Chih-Wei Hu, Miaoli County, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/105 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 27/115 (2006.01); H01L 23/528 (2006.01); H01L 21/8239 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11573 (2013.01); H01L 21/8239 (2013.01); H01L 23/5283 (2013.01); H01L 27/1157 (2013.01); H01L 27/11578 (2013.01);
Abstract

A memory structure and a method for manufacturing the same are provided. The memory structure comprises a substrate, stacks, memory layers, a conductive material and conductive lines. The stacks are positioned on the substrate. The stacks are separated from each other by trenches. Each of the stacks comprises alternately stacked conductive stripes and insulating stripes. The memory layers conformally cover the stacks respectively. The conductive material is positioned in the trenches and on the stacks. The conductive material in the trenches forms one or more holes in each of the trenches. The conductive lines are positioned on the conductive material. Each of the conductive lines comprises a first portion and a second portion connected to each other, the first portion extends along a direction perpendicular to an extending direction of the stacks, and the second portion extends along the extending direction of the stacks.


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