The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Nov. 27, 2012
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Susumu Kuwabara, Annaka, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
A method for measuring film thickness distribution, including calculating profile Pindicating wavelength dependence of a reflectance of a first wafer being an object measured with respect to a light at wavelengths not less than a wavelength region of visible light; calculating profile Pindicating wavelength dependence of a reflectance of a second wafer to light at wavelengths not less than wavelength region of visible light; obtaining a wavelength λobserved when profile Pof a difference between calculated profiles Pand Pbecomes zero; and selecting waveband including the obtained wavelength λas a waveband of light for use in film thickness distribution measurement by reflection spectroscopy. The film thickness distribution of the first thin film is measured by reflection spectroscopy in a manner that a surface of the first wafer is irradiated with a light to selectively measure only reflected light at a selected waveband.