The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Jan. 28, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Tsung-Yao Wen, Hsinchu, TW;
Jui-Yao Lai, Yuanlin Township, Changhwa County, TW;
Yao-De Chiou, Taoyuan, TW;
Sai-Hooi Yeong, Zhubei, TW;
Yen-Ming Chen, Chu-Pei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Abstract
A method for manufacturing a semiconductor structure is provided. The method includes implanting a first type of dopants in a first region and a second region and implanting a second type of dopants in the second region. In addition, an un-doped silicon layer is formed over the first and second regions, and a first and a second fin structures are formed. The first fin structure includes a first type of anti-punch through structure implanted with the first type of dopants and a first un-doped silicon structure over the first type of anti-punch through structure, and the second fin structure includes a second type of anti-punch through structure implanted with the second type of dopants and a second un-doped silicon structure formed over the second type of anti-punch through structure.