The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2016

Filed:

Jul. 30, 2007
Applicants:

Rubinder Randhawa, Dublin, CA (US);

Basha Sajjad, Pleasanton, CA (US);

Shmuel Erez, San Jose, CA (US);

Harry Christov, Campbell, CA (US);

Inventors:

Rubinder Randhawa, Dublin, CA (US);

Basha Sajjad, Pleasanton, CA (US);

Shmuel Erez, San Jose, CA (US);

Harry Christov, Campbell, CA (US);

Assignee:

Planar Semiconductor, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02052 (2013.01); H01L 21/67028 (2013.01); H01L 21/67034 (2013.01); H01L 21/67051 (2013.01);
Abstract

A single-chamber type cleaning-drying apparatus for flat objects, such as semiconductor wafers, wherein cleaning is carried out by impinging both sides of the wafer, which rotates at a relatively low speed, with jets of a washing liquid and wherein subsequent drying is carried out in the same chamber by increasing the rotation speed of the wafer and supplying isopropyl-alcohol (IPA) mist onto the wafer from the top of the chamber. After the IPA forms a solution with the residue of water on the wafer, the drying process is accelerated by supplying gaseous nitrogen through nozzles arranged on both sides of the wafer he coaxially with the wafer center. As a result, the IPA-water solution quickly evaporates without leaving traces of water drops on the dried surface.


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