The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Feb. 25, 2014
Silicon Storage Technology, Inc., San Jose, CA (US);
Nhan Do, Saratoga, CA (US);
Steven Malcolm Lemke, Boulder Creek, CA (US);
Jinho Kim, Saratoga, CA (US);
Jong-Won Yoo, Cupertino, CA (US);
Alexander Kotov, San Jose, CA (US);
Yuri Tkachev, Sunnyvale, CA (US);
Silicon Storage Technology, Inc., San Jose, CA (US);
Abstract
A method of reading a memory device having rows and columns of memory cells formed on a substrate, where each memory cell includes spaced apart first and second regions with a channel region therebetween, a floating gate disposed over a first portion of the channel region, a select gate disposed over a second portion of the channel region, a control gate disposed over the floating gate, and an erase gate disposed over the first region. The method includes placing a small positive voltage on the unselected source lines, and/or a small negative voltage on the unselected word lines, during the read operation to suppress sub-threshold leakage and thereby improve read performance.