The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Sep. 11, 2013
United Microelectronics Corp., Hsin-Chu, TW;
Chun-Hsien Huang, Tainan, TW;
Ming-Jui Chen, Hsinchu, TW;
Chia-Wei Huang, Kaohsiung, TW;
Hsin-Yu Chen, Nantou County, TW;
Kai-Lin Chuang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for forming a photo-mask is provided. A first photo-mask pattern relating to a first line, an original second photo-mask pattern relating to a first via plug, and a third photo-mask pattern relating to a second line are provided. A first optical proximity correction (OPC) process is performed. A second OPC process is performed, comprising enlarging a width of the second photo-mask pattern along the first direction to form a revised second photo-resist pattern. A contour simulation process is performed to make sure the revised second photo-mask pattern is larger or equal to the original second-mask pattern. The first photo-mask pattern, the revised second photo-mask pattern, and the third photo-mask pattern are output. The present invention further provides an OPC method.