The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Apr. 24, 2013
Applicants:

Steven Hung, Sunnyvale, CA (US);

Atif Noori, Saratoga, CA (US);

David Thompson, San Jose, CA (US);

Yoshihide Senzaki, Aptos, CA (US);

Inventors:

Steven Hung, Sunnyvale, CA (US);

Atif Noori, Saratoga, CA (US);

David Thompson, San Jose, CA (US);

Yoshihide Senzaki, Aptos, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); C23C 16/40 (2013.01); C23C 16/45531 (2013.01); C23C 16/45553 (2013.01); H01L 21/0228 (2013.01); H01L 21/02181 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01); H01L 21/02192 (2013.01); H01L 21/02194 (2013.01); H01L 21/02274 (2013.01); H01L 21/28194 (2013.01); H01L 29/517 (2013.01);
Abstract

Described are methods for atomic layer deposition of films comprising mixed metal oxides using metal amidinate precursors. The mixed metal oxide films may comprise a lanthanide and a transition metal such as hafnium, zirconium or titanium. Such mixed metal oxide films may be used as dielectric layers in capacitors, transistors, dynamic random access memory cells, resistive random access memory cells, flash memory cells and display panels.


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