The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

May. 13, 2013
Applicant:

Shin-etsu Chemical Co., Ltd., Chiyoda-ku, JP;

Inventors:

Souichi Fukaya, Niigata, JP;

Hideo Nakagawa, Niigata, JP;

Kouhei Sasamoto, Niigata, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/26 (2012.01); G03F 1/50 (2012.01); G03F 1/32 (2012.01); G03F 1/80 (2012.01); G03F 1/54 (2012.01);
U.S. Cl.
CPC ...
G03F 1/50 (2013.01); G03F 1/26 (2013.01); G03F 1/32 (2013.01); G03F 1/80 (2013.01); G03F 1/54 (2013.01);
Abstract

A light-shielding filmis formed on a transparent substrate. A hard mask filmis formed on this light-shielding film. The entire hard mask filmis made of a chromium-containing material including tin. The film made a chromium-containing material including tin can cause a significant increase in the etching rate at the time of chlorine-containing dry etching. Furthermore, comparing with a film made of a chromium-containing material in which part of chromium is replaced with a light element, the above film has an equal or higher level of etching resistance to fluorine-dry etching. Thus, burden on a photoresist at the time of etching the chromium-containing material film can be reduced. Therefore, high-precision pattern transfer can be performed even in the case that the resist film is thinned.


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