The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Mar. 15, 2012
Applicants:
Ryota Aburada, Kanagawa, JP;
Hiromitsu Mashita, Kanagawa, JP;
Taiga Uno, Kanagawa, JP;
Masahiro Miyairi, Kanagawa, JP;
Toshiya Kotani, Tokyo, JP;
Inventors:
Ryota Aburada, Kanagawa, JP;
Hiromitsu Mashita, Kanagawa, JP;
Taiga Uno, Kanagawa, JP;
Masahiro Miyairi, Kanagawa, JP;
Toshiya Kotani, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/42 (2006.01); G03B 27/54 (2006.01); G03B 27/68 (2006.01); G03F 1/36 (2012.01); G03F 7/20 (2006.01); G03F 1/70 (2012.01);
U.S. Cl.
CPC ...
G03F 1/36 (2013.01); G03F 1/70 (2013.01); G03F 7/70441 (2013.01); G03F 7/70941 (2013.01);
Abstract
One embodiment includes: a step of evaluating an amount of flare occurring through a mask at EUV exposure; a step of providing a dummy mask pattern on the mask based on the evaluated result of the amount of flare; and a step of executing a flare correction and an optical proximity correction on a layout pattern. The layout pattern is provided by the EUV exposure through the mask with the dummy mask pattern.