The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Apr. 24, 2015
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Shigeya Kimura, Kanagawa-ken, JP;
Yoshiyuki Harada, Tokyo, JP;
Hajime Nago, Kanagawa-ken, JP;
Koichi Tachibana, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing III group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.