The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Oct. 31, 2013
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Ralf Otremba, Kaufbeuren, DE;
Fabio Brucchi, Villach, AT;
Franz Stückler, St. Stefan, AT;
Teck Sim Lee, Melaka, MY;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 23/495 (2006.01); H01L 29/747 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/747 (2013.01); H01L 23/49503 (2013.01); H01L 23/49524 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 24/40 (2013.01); H01L 24/49 (2013.01); H01L 24/73 (2013.01); H01L 24/06 (2013.01); H01L 24/48 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/40137 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49113 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73263 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/13055 (2013.01);
Abstract
In an embodiment, a semiconductor device package includes a bidirectional switch circuit. The bidirectional switch circuit includes a first semiconductor transistor mounted on a first die pad, a second semiconductor transistor mounted on a second die pad, the second die pad being separate from the first die pad, and a conductive connector extending between a source electrode of the first transistor and a source electrode of the second transistor.