The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Oct. 10, 2013
Globalfoundries Inc., Grand Cayman, KY;
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Methods are presented for facilitating fabrication of a semiconductor device, such as a gate-all-around nanowire field-effect transistor. The methods include, for instance: providing at least one stack structure including at least one layer or bump extending above the substrate structure; selectively oxidizing at least a portion of the at least one stack structure to form at least one nanowire extending within the stack structure(s) surrounded by oxidized material of the stack structure(s); and removing the oxidized material from the stack structure(s), exposing the nanowire(s). This selectively oxidizing may include oxidizing an upper portion of the substrate structure, such as an upper portion of one or more fins supporting the stack structure(s) to facilitate full 360° exposure of the nanowire(s). In one embodiment, the stack structure includes one or more diamond-shaped bumps or ridges.