The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Dec. 18, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chieh-Shuo Liang, Kaohsiung, TW;
Hsing-Chih Lin, Tainan, TW;
Yu-Lung Yeh, Kaohsiung, TW;
Chih-Ho Tai, Tainan, TW;
Ching-Hung Huang, Erlin Township, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Abstract
Embodiments of mechanisms for forming a metal-insulator-metal (MIM) capacitor structure are provided. The metal-insulator-metal capacitor structure includes a substrate. The MIM capacitor structure also includes a CBM layer formed on the substrate, and the CBM layer includes a bottom barrier layer, a main metal layer and a top barrier layer. The MIM capacitor structure further includes a first high-k dielectric layer formed on the CBM layer, an insulating layer formed on the first high-k dielectric layer and a second high-k dielectric layer formed on the insulating layer. The MIM capacitor structure also includes a CTM layer formed on the second high-k dielectric layer, and the CBM layer includes a bottom barrier layer, a main metal layer and a top barrier layer.