The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Jan. 10, 2014
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Yun-Hua Chen, Hsinchu County, TW;
Yi-Chun Huang, Taoyuan County, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A method for forming a contact is provided. The method includes: forming a first dielectric layer over a substrate; forming a second dielectric layer over the first dielectric layer; patterning the second dielectric layer to form a first recess; patterning the first dielectric layer by a first etchant through the first recess to form a second recess, wherein the first etchant has a higher etching rate with respect to the first dielectric layer than with respect to the second dielectric layer and further wherein the second recess is aligned with the first recess; and forming a continuous contact plug in the first recess and the second recess.