The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Dec. 05, 2011
Tetsuya Shinjo, Toyama, JP;
Hiroaki Okuyama, Toyama, JP;
Keisuke Hashimoto, Toyama, JP;
Yasunobu Someya, Toyama, JP;
Ryo Karasawa, Toyama, JP;
Masakazu Kato, Toyama, JP;
Tetsuya Shinjo, Toyama, JP;
Hiroaki Okuyama, Toyama, JP;
Keisuke Hashimoto, Toyama, JP;
Yasunobu Someya, Toyama, JP;
Ryo Karasawa, Toyama, JP;
Masakazu Kato, Toyama, JP;
NISSAN CHEMICAL INDUSTRIES, LTD., Tokyo, JP;
Abstract
There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of 3 to 97:97 to 3 in molar ratio: A method for producing a semiconductor device, including the steps of: forming an underlayer film using the composition for forming a resist underlayer film on a semiconductor substrate; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a patterned resist film and developing; etching the hard mask according to the patterned resist film; etching the underlayer film according to the patterned hard mask; and processing the semiconductor substrate according to the patterned underlayer film.