The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Jun. 24, 2014
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chin-Cheng Chien, Tainan, TW;
Hsin-Kuo Hsu, Kaohsiung, TW;
Chih-Chien Liu, Taipei, TW;
Chin-Fu Lin, Tainan, TW;
Chun-Yuan Wu, Yun-Lin County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/205 (2006.01); H01L 21/336 (2006.01); H01L 21/8232 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/43 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 29/36 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); H01L 21/31111 (2013.01); H01L 29/06 (2013.01); H01L 29/0657 (2013.01); H01L 29/36 (2013.01); H01L 29/785 (2013.01); H01L 29/7853 (2013.01);
Abstract
A semiconductor device with fin-shaped structure is disclosed. The semiconductor device includes: a substrate; a fin-shaped structure on the substrate; and an epitaxial layer on a top surface and part of the sidewall of the fin-shaped structure, in which the epitaxial layer and the fin-shaped structure includes a linear gradient of germanium concentration therebetween.