The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Dec. 27, 2013
Applicant:
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/24 (2006.01); H01L 21/02 (2006.01); C23C 16/02 (2006.01); C30B 25/02 (2006.01); C30B 25/18 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); C23C 16/0272 (2013.01); C23C 16/24 (2013.01); C30B 25/02 (2013.01); C30B 25/18 (2013.01); C30B 29/06 (2013.01); H01L 21/0245 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01);
Abstract
Provided is a method of forming a seed layer as a seed of a thin film on an underlayer, which includes: forming a first seed layer on a surface of the underlayer by heating the underlayer, followed by supplying an aminosilane-based gas onto the surface of the heated underlayer; and forming a second seed layer on the surface of the underlayer with the first seed layer formed thereon by heating the underlayer, followed by supplying a disilane or higher order silane-based gas onto the surface of the heated underlayer.