The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

Aug. 04, 2015
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yusuke Saitoh, Miyagi, JP;

Ryuuu Ishita, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3244 (2013.01); H01J 37/32009 (2013.01);
Abstract

Verticality of a space formed in the multilayered film can be improved while suppressing an opening of a mask from being clogged. The multilayered film includes a first film and a second film that have different permittivities and are alternately stacked on top of each other. An etching method of etching the multilayered film includes preparing, within a processing vessel of a plasma processing apparatus, a processing target object having the multilayered film and a mask provided on the multilayered film; and etching the multilayered film by exciting a processing gas containing a hydrogen gas, a hydrofluorocarbon gas, a fluorine-containing gas, a hydrocarbon gas, a boron trichloride gas and a nitrogen gas within the processing vessel.


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