The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
May. 30, 2012
Applicants:
Sander Frederik Wuister, Eindhoven, NL;
Vladimir Mihailovitch Krivtsun, Troitsk, RU;
Andrei Mikhailovich Yakunin, Mierlo, NL;
Inventors:
Sander Frederik Wuister, Eindhoven, NL;
Vladimir Mihailovitch Krivtsun, Troitsk, RU;
Andrei Mikhailovich Yakunin, Mierlo, NL;
Assignee:
ASML NETHERLANDS B.V., Veldhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/038 (2006.01); G03F 7/004 (2006.01); C08F 30/08 (2006.01); G03F 7/075 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0388 (2013.01); C08F 30/08 (2013.01); G03F 7/0043 (2013.01); G03F 7/0758 (2013.01); G03F 7/2002 (2013.01);
Abstract
A lithographic process includes the use of a silicon-containing polymer or a compound that includes at least one element selected from the group consisting of: Ta, W, Re, Os, Ir, Ni, Cu or Zn in a resist material for an EUV lithographic process. The wavelength of the EUV light used in the process is less than 11 nm, for example 6.5-6.9 nm. The invention further relates to novel silicon-containing polymers.