The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Jan. 17, 2014
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;

Inventors:

Shih-Chi Kuo, Yangmei, JP;

Tsung-Hsien Lee, Tainan, TW;

Ta-Ching Wei, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 27/11 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11 (2013.01); H01L 21/0271 (2013.01); H01L 21/31111 (2013.01); H01L 21/32053 (2013.01); H01L 27/1116 (2013.01);
Abstract

In accordance with some embodiments, a semiconductor device structure is provided. The semiconductor device structure includes a substrate, and the substrate has a cell region and a logic region. The semiconductor device structure also includes an isolation feature formed in the substrate and a first gate stack structure formed on the isolation feature and at the cell region. The semiconductor device structure further includes a second gate stack structure formed on the isolation feature and at the cell region, and the first gate stack structure is adjacent to the second gate stack structure. The isolation feature between the first gate stack structure and the second gate stack structure has a substantially planar topography.


Find Patent Forward Citations

Loading…