The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Mar. 19, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chun-Lei Hsu, Keelung, TW;
Ming-Che Ho, Tainan, TW;
Ming-Da Cheng, Jhubei, TW;
Chung-Shi Liu, Shin-Chu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 2224/03424 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/1148 (2013.01); H01L 2224/1161 (2013.01); H01L 2224/11452 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11616 (2013.01); H01L 2224/11831 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13005 (2013.01); H01L 2224/1308 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/13169 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/00013 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/0104 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01012 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01025 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01038 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/19041 (2013.01);
Abstract
A method of forming a semiconductor device includes forming an under-bump metallurgy (UBM) layer overlying a portion of a metal pad region within an opening of an encapsulating layer over a semiconductor substrate, and forming a bump layer overlying the UBM layer to fill the opening of the encapsulating layer. A removal process is initiated on an upper surface of the encapsulating layer and a coplanar top surface of the bump layer to remove the upper surface of the encapsulating layer until a top portion of the bump layer protrudes from the encapsulating layer.