The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Sep. 11, 2014
Applied Materials, Inc., Santa Clara, CA (US);
Amit Chatterjee, Cupertino, CA (US);
Geetika Bajaj, New Delhi, IN;
Pramit Manna, Santa Clara, CA (US);
He Ren, San Jose, CA (US);
Tapash Chakraborty, Mumbai, IN;
Srinivas D. Nemani, Sunnyvale, CA (US);
Mehul Naik, San Jose, CA (US);
Robert Jan visser, Menlo Park, CA (US);
Abhijit Basu Mallick, Palo Alto, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of depositing thin, low dielectric constant layers that are effective diffusion barriers on metal interconnects of semiconductor circuits are described. A self-assembled monolayer (SAM) of molecules each having a head moiety and a tail moiety are deposited on the metal. The SAM molecules self-align, wherein the head moiety is formulated to selectively bond to the metal layer leaving the tail moiety disposed at a distal end of the molecule. A dielectric layer is subsequently deposited on the SAM, chemically bonding to the tail moiety of the SAM molecules.