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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9257273 B1

PDFFull Text
Date of Patent:
Feb. 09, 2016

Filed:

Sep. 22, 2011

Charged particle beam apparatus, thin film forming method, defect correction method and device forming method

Applicants:

Yoshihiro Koyama, Chiba, JP;

Anto Yasaka, Tokyo, JP;

Tatsuya Shimoda, Ishikawa, JP;

Yasuo Matsuki, Tokyo, JP;

Ryo Kawajiri, Ishikawa, JP;

Inventors:

Yoshihiro Koyama, Chiba, JP;

Anto Yasaka, Tokyo, JP;

Tatsuya Shimoda, Ishikawa, JP;

Yasuo Matsuki, Tokyo, JP;

Ryo Kawajiri, Ishikawa, JP;

Assignees:

HITACHI HIGH-TECH SCIENCE CORPORATION, , JP;

JAPAN SCIENCE AND TECHNOLOGY AGENCY, , JP;

JSR CORPORATION, , JP;

Attorney:

Adams & Wilks

Primary Examiner:

Marvin Payen

Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); H01J 37/317 (2006.01); C23C 16/04 (2006.01); C23C 16/24 (2006.01); C23C 16/32 (2006.01); C23C 16/40 (2006.01); C23C 16/42 (2006.01); C23C 16/48 (2006.01); C23C 16/56 (2006.01); H01L 21/66 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02263 (2013.01); C23C 16/045 (2013.01); C23C 16/24 (2013.01); C23C 16/325 (2013.01); C23C 16/401 (2013.01); C23C 16/42 (2013.01); C23C 16/486 (2013.01); C23C 16/487 (2013.01); C23C 16/56 (2013.01); H01J 37/3178 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02631 (2013.01); H01L 21/28079 (2013.01); H01L 21/28211 (2013.01); H01L 22/20 (2013.01); H01L 29/66568 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source, a condenser lens electrode, a blanking electrode, a scanning electrode, a sample stageon which a sampleis mounted, a secondary charged particle detectorthat detects a secondary charged particlegenerated from the samplein response to the charged particle beam irradiation, a reservoirthat accommodates cyclopentasilane as a source gas, and a gas gunthat supplies the source gas to the sample

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