The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Dec. 04, 2014
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Jie Zhao, Singapore, SG;

Chia-Ping Chen, Taoyuan County, TW;

Ching-Shu Lo, Singapore, SG;

Assignee:

UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G03F 1/36 (2012.01);
U.S. Cl.
CPC ...
G03F 1/36 (2013.01);
Abstract

A method of performing optical proximity correction for preparing a mask projected onto a wafer by photolithography includes the following steps. An integrated circuit layout design including a first feature and a second feature is obtained, wherein the first feature overlaps a first boundary of two structures in the wafer. An edge of the first feature close to the second feature pertaining to a specific trend section of an experimental chart having trend sections is recognized. An optical proximity correction value is evaluated for the edge through a computer system according to a rule corresponding to the specific trend section. The layout design is compensated with the optical proximity correction value.


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