The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2016

Filed:

Aug. 25, 2014
Applicant:

Intermolecular Inc., San Jose, CA (US);

Inventors:

Nobumichi Fuchigami, Sunnyvale, CA (US);

Pragati Kumar, Beaverton, OR (US);

Prashant B Phatak, San Jose, CA (US);

Assignee:

Intermolecular, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/146 (2013.01); H01L 27/2463 (2013.01); H01L 45/08 (2013.01); H01L 45/10 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/1616 (2013.01); H01L 27/2409 (2013.01);
Abstract

ALD processing techniques for forming non-volatile resistive-switching memories are described. In one embodiment, a method includes forming a first electrode on a substrate, maintaining a pedestal temperature for an atomic layer deposition (ALD) process of less than 100° Celsius, forming at least one metal oxide layer over the first electrode, wherein the forming the at least one metal oxide layer is performed using the ALD process using a purge duration of less than 20 seconds, and forming a second electrode over the at least one metal oxide layer.


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