The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2016

Filed:

Apr. 30, 2011
Applicants:

Daesik Choi, Seoul, KR;

Sang MI Park, Kyounggi-do, KR;

Inventors:

DaeSik Choi, Seoul, KR;

Sang Mi Park, Kyounggi-do, KR;

Assignee:

STATS ChipPAC, Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49816 (2013.01); H01L 21/4853 (2013.01); H01L 24/13 (2013.01); H01L 23/3192 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/81 (2013.01); H01L 24/94 (2013.01); H01L 2224/0332 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/0361 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/03474 (2013.01); H01L 2224/03912 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0566 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05671 (2013.01); H01L 2224/10145 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/1133 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11452 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/11901 (2013.01); H01L 2224/11903 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13016 (2013.01); H01L 2224/13019 (2013.01); H01L 2224/13076 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81411 (2013.01); H01L 2224/81424 (2013.01); H01L 2224/81439 (2013.01); H01L 2224/81444 (2013.01); H01L 2224/81447 (2013.01); H01L 2224/81455 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/94 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01); H01L 2924/381 (2013.01); H01L 2924/3841 (2013.01);
Abstract

A semiconductor device has a semiconductor die with a first conductive layer formed over an active surface of the semiconductor die. An insulation layer is formed over the active surface of the semiconductor die. A second conductive layer is conformally applied over the insulating layer and first conductive layer. Conductive pillars are formed over the first conductive layer. Conductive rings are formed around a perimeter of the conductive pillars. A conductive material is deposited over the surface of the conductive pillars within the conductive rings. A substrate has a third conductive layer formed over a surface of the substrate. The semiconductor die is mounted to a substrate with the third conductive layer electrically connected to the conductive material within the conductive rings. The conductive rings inhibit outward flow of the conductive material from under the conductive pillars to prevent electrical bridging between adjacent conductive pillars.


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