The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2016

Filed:

Sep. 12, 2014
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Sheng-Tsai Wu, Bade, TW;

Heng-Chieh Chien, New Taipei, TW;

John H. Lau, Taipei, TW;

Yu-Lin Chao, Hsinchu, TW;

Wei-Chung Lo, Taipei, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 21/768 (2006.01); H01L 21/48 (2006.01); H01L 23/42 (2006.01); H01L 23/427 (2006.01); H01L 23/433 (2006.01); H01L 21/50 (2006.01); H01L 21/56 (2006.01); H01L 25/065 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 25/18 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/4882 (2013.01); H01L 21/50 (2013.01); H01L 21/563 (2013.01); H01L 23/3675 (2013.01); H01L 23/42 (2013.01); H01L 23/4275 (2013.01); H01L 23/433 (2013.01); H01L 24/29 (2013.01); H01L 24/97 (2013.01); H01L 25/0652 (2013.01); H01L 25/0655 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 25/18 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/29387 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/81192 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/92125 (2013.01); H01L 2224/92225 (2013.01); H01L 2224/97 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/157 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/167 (2013.01); H01L 2924/1659 (2013.01); H01L 2924/16153 (2013.01); H01L 2924/16251 (2013.01); H01L 2924/16724 (2013.01); H01L 2924/16747 (2013.01);
Abstract

A thinned integrated circuit device and manufacturing process for the same are disclosed. The manufacturing process includes forming a through-silicon via (TSV) on a substrate, a first terminal of the TSV is exposed on a first surface of the substrate, disposing a bump on the first surface of the substrate to make the bump electrically connected with the TSV, disposing an integrated circuit chip (IC) on the bump so that a first side of the IC is connected to the bump, disposing a thermal interface material (TIM) layer on a second side of the IC opposite to the first side of the IC, attaching a heat-spreader cap on the IC by the TIM layer, and backgrinding a second surface of the substrate to expose the TSV to the second surface of the substrate while carrying the heat-spreader cap.


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