The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2016

Filed:

Jan. 11, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chun Hsiung Tsai, Xinpu Township, TW;

Meng-Yueh Liu, Taoyuan, TW;

Kun-Hsiang Liao, Keelung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01K 7/00 (2006.01); H01L 21/00 (2006.01); G01K 3/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/00 (2013.01); G01K 3/04 (2013.01);
Abstract

The embodiments of mechanisms for monitoring thermal budget of an etch process of a cyclic deposition/etch (CDE) process to form an epitaxially grown silicon-containing material are descried to enable and to improve process control of the material formation. The monitoring is achieved by measuring the temperature of each processed wafer as a function of process time to calculate the accumulated thermal budget (ATB) of the wafer and to compare the ATB with a reference ATB (or optimal accumulated thermal budget, OATB) to see if the processed wafer is within an acceptable range (or tolerance). The results are used to determine whether to pass the processed wafer or to reject the processed wafer.


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