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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9246055 B1

PDFFull Text
Date of Patent:
Jan. 26, 2016

Filed:

Jan. 03, 2014

Crystal growth method and semiconductor light emitting device

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Hajime Nago, Kanagawa-ken, JP;

Koichi Tachibana, Kanagawa-ken, JP;

Toshiki Hikosaka, Tokyo, JP;

Shinya Nunoue, Chiba-ken, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Asok K Sarkar

Assistant Examiner:

Dmitriy Yemelyanov

Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 33/12 (2010.01); H01L 33/06 (2010.01); H01L 21/02 (2006.01); H01L 33/20 (2010.01); H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 33/06 (2013.01); H01L 33/20 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01);
Abstract

According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities. The method can include depositing a buffer layer on the major surface at a rate of not more than 0.1 micrometers per hour. The buffer layer includes GaAlN (0.1≦x<0.5) and has a thickness of not smaller than 20 nanometers and not larger than 50 nanometers. In addition, the method can include growing the crystal including a nitride semiconductor on the buffer layer at a temperature higher than a temperature of the substrate in the depositing the buffer layer.

Find Patent Forward Citations

Nago, Hajime. (2016). Crystal growth method and semiconductor light emitting device (U.S. Patent No. 9246055). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9246055

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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